Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrO x-Based Structures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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dep-06-2017

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrO x-Based Structures

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L. Khomenkova, D. Lehninger, O. Kondratenko, S. Ponomaryov, O. Gudymenko, Z. Tsybrii, V. Yukhymchuk, V. Kladko, J. von Borany, J. Heitmann // Nanoscale Research Letters (2017) 12:196

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