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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Projects Publications dep06 dep-06-2017 Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatmentA.N. Nazarov, V.O. Yukhymchuk, Y.V. Gomeniuk, S. Kryvyi, P.N. Okholin, P.M. Lytvyn, V.P. Kladko, V.S. Lysenko, V.I. Glotov, I.E. Golentus, E. Napolitani, R. Duffy // Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics.35, 051203 2017
