Low-frequency noise in SOI SiGe HBTs made by selective growth of Si collector and non-selective growth of SiGe base

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Low-frequency noise in SOI SiGe HBTs made by selective growth of Si collector and non-selective growth of SiGe base

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Lukyanchikova N., Garbar N., Smolanka A., Lokshin M., Hall S., Buiu O., Mitrovoc I. Z., El Mubarek H. A. W., and Ashburn P. // Proc. ICNF’18 – 2005. – P. 265-268.

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