Electron and Hole Effective Masses in Heavily Boron Doped Silicon: Nanostructures Determined by Cyclotron Resonance Experiments

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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dep-06-2018

Electron and Hole Effective Masses in Heavily Boron Doped Silicon: Nanostructures Determined by Cyclotron Resonance Experiments

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D.V. Savchenko, E. N. Kalabukhova, B.D. Shanina, N.T. Bagraev, L.E. Klyachkin, A.M. Malyarenko // SPQEO, (2018), vol.21 , #3, зз. 251-256, https://doi.org/10.15407/spqeo21.03

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