Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Search

You are here: Home

Projects

Publications

dep06

dep-06-before

Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin

Details: Hits: 9024

R.M. Rudenko, V.V. Voitovych, M.M. Kras’ko, A.G. Kolosyuk, A.M. Kraichynskyi, V.O. Yukhymchuk, V.A. Makara // Ukr. J. Phys. V. 58(8), P. 769 (2013)

Search

Nav view search

Navigation