Si-rich-SiO2 layers with high excess silicon content: light emission and structural properties

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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L. Khomenkova, N. Korsunska, M.Baran, T.Stara, V. Yukhymchuk, et al. // Physics Procedia V. 2, P. 147-159 (2009)

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