Integer quantum Hall effect in graphene channel with p-n-junction at domain wall in a strained ferroelectric film

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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M.V. Strikha, A.I. Kurchak, A.N. Morozovska // J. Appl.Phys., 125 (8), 082525 (2019) https://doi.org/10.1063/1.5052546

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