InAs quantum dot emission and annealing impact in quantum wells with strain reduced InAlGaAs layers

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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T.V. Torchynska, R.C. Tamayo, G. Polupan, A. Stints, L. Shcherbyna // J. Lumin. – 2015. - Vol.163. - P.40-46.

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