Diffusion versus ion implantation:Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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dep-14-2016

Diffusion versus ion implantation:Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

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KorovinA.V., AlvarezJ., KleiderJ.-P. Proc. of the 6th International Conference on Silicon Photovoltaics (Silicon PV), March 7-9 2016, Chambéry, France.

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