Diffusion versus ion implantation:Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Search

You are here: Home

Projects

Publications

dep14

dep-14-2016

Diffusion versus ion implantation:Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

Details: Hits: 20241

KorovinA.V., AlvarezJ., KleiderJ.-P. Proc. of the 6th International Conference on Silicon Photovoltaics (Silicon PV), March 7-9 2016, Chambéry, France.

Search

Nav view search

Navigation