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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Projects Publications dep02 dep-02-2016 Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal StabilityA.V. Kuchuk, P. Borowicz, M. Wzorek, M. Borysiewicz, R. Ratajczak, K. Golaszewska, E. Kaminska, V. Kladko, and A. Piotrowska. // Advances in Condensed Matter Physics, V.2016, Article ID 9273702 (2016). http://dx.doi.org/10.1155/2016/9273702
