Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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A.V. Kuchuk, V.P. Kladko, T.L. Petrenko, V.P. Bryksa, A.E. Belyaev, Yu.I. Mazur, M.E. Ware, E.A. DeCuir Jr and G.J. Salamo. // Nanotechnology, Vol.25, No 24, 245602 (2014).

http://iopscience.iop.org/0957-4484/25/24/245602

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