Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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A. V. Kuchuk, H. V. Stanchu, Chen Li, M. E. Ware, Yu. I. Mazur, V. P. Kladko, A. E. Belyaev and G. J. Salamo. Journal of Applied Physics. V.116, Issue 22, 224302 (2014).

http://dx.doi.org/10.1063/1.4904083

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