Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE. X-Ray study.

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, P.M. Lytvyn, V.G. Raicheva, A.E. Belyaev, Yu.I. Mazur, E.A. DeCuir Jr, M.E. Ware, and G.J. Salamo // Journal of Physics D: Applied Physics, V.44. No2, ID 025403 (2011).

http://iopscience.iop.org/0022-3727/44/2/025403

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