Features of ZnS-Powder Doping with a Mn Impurity during Synthesis and Subsequent Annealing

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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N.E. Korsunskaya, Yu.Yu. Bacherikov, T.R. Stara, V.P. Kladko, N.P. Baran, Yu.O. Polischuk, A.V. Kuchuk, A.G. Zhuk, E.F. Venger // Semiconductors, V.47, N5, P.713-720 (2013).

http://x-ray.net.ua/downloads/prints/papers/xray_364.pdf

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