Formation Mechanism of Contact Resistance to III–N Heterostructures with a High Dislocation Density

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Naumov, V.N. Panteleev, V.N. Sheremet // Semiconductors, V.47, No.9, P.1180–1184 (2013).

http://x-ray.net.ua/downloads/prints/papers/xray_375.pdf

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