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Ge-on-GaAs Film resistance thermometrers
№46 Laboratory of Physical and technological problems sensor electronics
V.F. Mitin, V.V. Kholevchuk
Applications:
Ge-on-GaAs resistance thermometers are intended for static and dynamic temperature measurements and covering the temperature range for operation from 0.03 K to 500 K.
Description:
The thermometers are based on Ge film resistors deposited onto semi-insulating GaAs substrates using vacuum technology. Ge-on-GaAs film temperature sensing elements are produced using standard semiconductor processing techniques and provide high device sensitivity within the range 0.03 K to 500 K. The prepared sensing elements are then employed in different packages. At present three types of sensor packages are offered:- cylindrical canister package, made from gold plated copper (3 mm in diameter and 5.0 mm long), micro-package (1.2 mm in diameter and 1.0 mm long) and micro-package with plate (2 mm square by 0.15 mm thick).
Main advantages:
• wide temperature range for operation (0.03 to 500 K)
• monotonic response over a wide temperature range
• high sensitivity
• high accuracy
• small temperature reading errors for operation in magnetic fields
• small size
• extremely fast response to temperature changes
• high radiation tolerance
• high quality and low price
Operating characteristics:
Typical dependences of resistance and sensitivities for thermometers of different models
Temperature Errors, ΔT/T0 , (percent) as a Function of Magnetic Field and Temperature
Model Temperature (K) Magnetic field induction (T)
2.5 4 6 8 14
TTR-G 0.5 0.43 -1.74 -3.65 -6.2 -
1.0 0.0 -0.3 -0.8 - -
2.1 -0.82 -2.8 -6.8 -11.12 24.1
4.2 -0.4 -1.0 -2.7 -4.7 -12.5
77.4 -0.13 -0.21 -0.3 -0.45 -2.0
TTR-D 0.1 63.9 66.7 69.5 - -
0.3 0.5 -0.55 -1.0 - -
4.2 -5.0 -8.1 -12.0 - -
TTR-M 4.2 0.5 0.37 -0.44 -2.0 -