V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine

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Noncooled photodetector of IR radiation

№22 Department semiconductor infrared Photoelectronics
   V.V. Tetorkіn

033

Destination
The photodetector can be used for detection of laser radiation in the infrared wavelength range.
Principle of operation
The signal from InSb photoresistor operated at room temperature is enhanced by a preamplifier with multiplication factor 100 and bandpass 100 kHz.
Areas of application
Noncooled infrared photodetector can be used in scientific investigations, medicine and thermal imaging technique.
Technical parameters
Semiconductor                     InSb
Wavelength range, μm                2-7
Detectivity, D*, cm Hz1/2W-1            1×108
Time constant, μs                    0.05
Supply voltage, V                    9
Operating temperature, К                 300
Area of sensitive element, mm            1х1