Evolution of the Deformation State and Composition as a Result of Changes in the Number of Quantum Wells in Multilayered InGaN/GaN Structures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich, B.Ya. Ber, and D.Yu. Kazantsev // Semiconductors, V.45, No.6, P.753–760 (2011).

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