Effect of annealing in zinc vapors on charge trapping properties of ZnSe, ZnSe(Te) and ZnSe(Al) scintillation crystals: Revealing the mechanisms by DFT computational studies

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Yu.A. Hizhnyi, S.G. Nedilko, V.I. Borysiuk, V.P. Chornii, I.A. Rybalka, S.M. Galkin, I. A. Tupitsyna, N.I. Klyui// Optical Materials 97 (2019) 109402

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