Investigation of Physical Mechanisms of Metal-Insulator Transition in highly strained n-Si and n-Ge crystals

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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S.I. Budsulyak, V.M.Ermakov, B.R.Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus’, E.F. Venger//Semiconductor Physics, Quantum Electronics & Optoelectronics, V.6. N1. P.37-40 (2003)

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