On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Sachenko A.V., Belyaev A.E., Boltovets N.S. et al. //Semiconductor Physics, Quantum Electronics & Optoelectronics.- 2014.- V. 17, N 1.- P. 1-6.

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