Recombination mechanisms in doped n-type HgCdTe crystals and properties of diffusion p+-n-junctions based on them

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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V.V.Tetyorkin, S.Ya.Stochanskii, F.F.Sizov // Semiconductors, 31, 290-293 (1997)

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