Compensation and carrier trapping in indium-doped CdTe: Contributions from an important near-mid-gap donor

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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V. Babentsov, J. Franc, R.-B. James // Appl. Phys. Lett., V. 94, iss.5, pp. 052102-3, 2 February 2009

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