Calculation of spin-Hamiltonian constants for extended defects(VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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B.D. Shanina, V.Ya. Bratus // SPQEO. (2018) 21 N3 255-230.

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