V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine
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dep07-1
dep-07-2014-1
Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon.
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O. Oberemok, V. Kladko, V. Litovchenko, B. Romanyuk, V. Popov, V. Melnik, A. Sarikov, O. Gudymenko and J. Vanhellemont // Semicond. Sci. Technol. 29 (2014) 055008 (7pp)