V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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A. Sarikov, I. Lisovskyy, V. Naseka, et al // Solid State Phenomena, 2014.–V.205-206.–P.492–496
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A. Sarikov, I. Lisovskyy, M. Voitovych, et al // Advanced Materials Research, 2014.–V.854.–P. 69-74.
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V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 4. P. 317-324.
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Yu. Goltvyanskyi, I. Khatsevych, A. Kuchuk, V. Kladko, V. Melnik, P. Lytvyn, V. Nikirin, B. Romanyuk // Thin Solid Films, 564 (2014), 179–185
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O. Oberemok, V. Kladko, V. Litovchenko, B. Romanyuk, V. Popov, V. Melnik, A. Sarikov, O. Gudymenko and J. Vanhellemont // Semicond. Sci. Technol. 29 (2014) 055008 (7pp)

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  1. Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon.
  2. Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions.
  3. Peculiarities of the Impurity Redistribution Under Ultra-Shallow Junction Formation in Silicon.
  4. Formation of Shallow n-p Junctions in Cz-Si by Low-Energy Implantation of Carbon Ions.