Effect of annealing in zinc vapors on charge trapping properties of ZnSe, ZnSe(Te) and ZnSe(Al) scintillation crystals: Revealing the mechanisms by DFT computational studies

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Search

You are here: Home

Projects

Publications

lab09-2

lab09-2-2019

Effect of annealing in zinc vapors on charge trapping properties of ZnSe, ZnSe(Te) and ZnSe(Al) scintillation crystals: Revealing the mechanisms by DFT computational studies

Details: Hits: 12227

Yu.A. Hizhnyi, S.G. Nedilko, V.I. Borysiuk, V.P. Chornii, I.A. Rybalka, S.M. Galkin, I. A. Tupitsyna, N.I. Klyui// Optical Materials 97 (2019) 109402

Search

Nav view search

Navigation