Drift correction of the analyzed area during the study of lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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dep-06-2016

Drift correction of the analyzed area during the study of lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy

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S.S. Ponomaryov, V.O. Yukhymchuk, M. Ya. Valakh // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2016, V. 19, N 4.

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