Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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S Golovynskyi, O. Datsenko, L Seravalli, O. Kozak, G Trevisi, P Frigeri, I S Babichuk, I Golovynska, Junle Qu // Semiconductor Science and Technology, 32 (2017) 125001 (10pp)

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