Photoluminescence properties of ZnS:Mn single crystal effected by defect drift in electric and pulsed magnetic fields

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Bacherikov Yu. Yu., Vorona I.P., Zhuk A.G., Okhrimenko O.B., Kurichka R.V., Tarasov G.G.// Journal of Luminescence. – 2018.‑ V.204.‑ P. 548-553.