Photoluminescence properties of ZnS:Mn single crystal effected by defect drift in electric and pulsed magnetic fields

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Bacherikov Yu. Yu., Vorona I.P., Zhuk A.G., Okhrimenko O.B., Kurichka R.V., Tarasov G.G.// Journal of Luminescence. – 2018.‑ V.204.‑ P. 548-553.

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