Confocal Raman depth-profile analysis of the electrical and structural properties in III-nitride structures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Search

Details: Hits: 8794

V.V. Strelchuk, V.P. Bryksa, K.A. Avramenko, M.Ya. Valakh, A.E. Belyaev, Yu.I. Mazur, M.E. Ware, E.A. Jr. DeCuir, G.J. Salamo // Physica status solidi (c) V. 8, No. 7-8, P. 2188–2190 (2011)

Search

Nav view search

Navigation