The nanometer scaled defects induces with the dislocation motion in II-VI insulated semiconductors

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

V.N. Babentsov, V.A. Boyko, A.F. Kolomys, G.A. Shepelski, V.V. Strelchuk, N.I. Tarbaev // Advanced Materials Research V. 276, P. 195-202 (2011)

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