Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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D. Savchenko, E. Kalabukhova, B. Shanina, S. Cichoň, J. Honolka, V. Kiselov, and E. Mokhov // J. Appl. Phys., 119, 045701 (2016); doi: 10.1063/1.4940739.

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