Electrodynamic model of the field effect transistor application for THz/subTHz radiation detection: Subthreshold and above threshold operation

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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V. Dobrovolsky, Electrodynamic model of the field effect transistor application for THz/subTHz radiation detection: Subthreshold and above threshold operation. J. Appl. Phys. 2014. 116, p. 154503-1 – 154503-10.

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