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Torchynska T., Khomenkova L., Slaoui A. - J. Electron. Mat. – 2018 – V 47 – P. 3927-3933.DOI: https://doi.org/10.1007/s11664-018-6271-0
V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Torchynska T., Khomenkova L., Slaoui A. - J. Electron. Mat. – 2018 – V 47 – P. 3927-3933.DOI: https://doi.org/10.1007/s11664-018-6271-0