Peculiarities of injected phenomena in heavily doped silicon structures and developing radiation-resistance diode temperature sensors

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Yu.M. Shwarts, V.N. Sokolov, M.M. Shwarts, E.F. Venger //Semiconductor Physics, Quantum Electronics & Optoelectronics, v.6, №2, p.233-237 (2003)

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