Peculiarities of injected phenomena in heavily doped silicon structures and developing radiation-resistance diode temperature sensors

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Search

Details: Hits: 5319

Yu.M. Shwarts, V.N. Sokolov, M.M. Shwarts, E.F. Venger //Semiconductor Physics, Quantum Electronics & Optoelectronics, v.6, №2, p.233-237 (2003)