Investigation of physical mechanisms metal-insulator transition in highly strained n-Si and n-Ge crystals

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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S.I. Budsulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasuk, B.B. Suss, E.F. Venger // Semiconductor Physics, Quantum Electronics & Optoelectronics, v.6, №1, p.37-40 (2003)

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