Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonanc

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Savchenko D., Kalabukhova E., Shanina B., CichoňS., HonolkaJ., KiselovV., Mokhov E.// Journal of Applied Physics – 2016 – V.119 – №4 – P.04570(1-7).