The influence of oxidation process on the photoluminescence efficiency and spectra of porous silicon

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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B.M. Bulakh, N.E. Korsunska, L.Yu. Khomenkova, T. Stara, M. Sheinkman // Semiconductors. – 2006. - V.40. –P.614-619.