LKE and BGI Lorentzian Noise in Strained and Non-Strained Tri-Gate SOI FinFETs with HfSiON/SiO2 Gate Dielectric

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Solid- State Electronics. – 2011. – V. 63, № 1.– P. 27–36.