Behaviour of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques”, in:”Noise and Fluctuations

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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N. Lukyanchikova, N.Garbar, V.Kudina, A.Smolanka, E.Simoen, C.Claeys // in:”Noise and Fluctuations”, Ed. M.Tacano, Y.Yamamoto, M.Nakao, AIP – 2007. - P.39-42.

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