Short-channel effects in the Lorentzian noise induced by the EVB tunnelling in partially-depleted SOI MOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Lukyanchikova N., Garbar N., Smolanka A., Simoen E., Mercha A., and Claeys C. // Solid-State Electron. – 2004. Vol. 48, № 5. P. 747-758.