Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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N. Lukyanchikova, N. Garbar, A. Smolanka, E. Simoen, A. Mercha, C. Claeys // Solid-State Electron. – 2004. - V. 48. - P. 747-758.