Critical dscussion of the front-back gate coupling effect on the low-frequency noise in fully-depleted SOI MOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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E. Simoen, A. Mercha, C. Claeys, N. Lukyanchikova, N. Garbar // IEEE transaction on Electron Devices – 2004. - V. 51, N 6. - P. 1008-1016.