Explaining the parameters of the electron valence-band tunnelling related Lorentzian noise in fully depleted SOI MOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Search

Details: Hits: 8651

Simoen E., Mercha A., Rafí J.M., Claeys C., Lukyanchikova N.B., and Garbar N. // IEEE Electron Device Lett. – 2003. Vol. 24, № 12. P. 751-754.