Explaining the parameters of the electron valence-band tunnelling related Lorentzian noise in fully depleted SOI MOSFETs

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Simoen E., Mercha A., Rafí J.M., Claeys C., Lukyanchikova N.B., and Garbar N. // IEEE Electron Device Lett. – 2003. Vol. 24, № 12. P. 751-754.

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