Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFEETs near inverted front or buried p-Si/SiO2 interface

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Lukyanchikova N.B., Petrichuk M.V., Garbar N.P., Simoen E., and Claeys C. // Semicond. Sci. Technol. – 1999. – Vol. 14. – P. 775-83.