Back and front interface related generation-recombination noise in buried channel SOI pMOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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N.B.Lukyanchikova, N.P.Garbar, M.Petrichuk, E.Simoen, C.Claeys // IEEE Transaction on Electron Devices – 1996. - 43, № 3. - Р. 417-423.