Formation of Shallow n-p Junctions in Cz-Si by Low-Energy Implantation of Carbon Ions.

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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B. Romanyuk, V. Melnik, V. Popov, V. Litovchenko, V. Babich, V. Ilchenko, V. Kladko, and J. Vanhellemont // ECS Transactions, 64 (11) 187-198 (2014)

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