V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine
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dep07-1
dep-07-2014-1
Peculiarities of the Impurity Redistribution Under Ultra-Shallow Junction Formation in Silicon.
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V. Litovchenko, B. Romanyuk, O. Oberemok, V. Popov, V. Melnik, K. Rudenko and V. Vyurkov // Advanced Mat. Res., v.854, 2014, p.141-145