Two ways of porous Si photoluminescence excitation

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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T.V. Torchinskaya, N.E. Korsunskaya, L.Yu. Khomenkova, M.K. Sheinkman, N.P. Baran, A. Misiuk, B. Surma, B. Dzhumaev // Materials Science and Engineering: B.-1998.-V.51, Is.1.-P.162-165.